Sign In Please sign in to access your account Email Address. CMOS process flow 2. Every chapter is revised to reflect advances in VLSI devices in the last 10 years since the publication of the original book.
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Back to resources home. Please register or sign in to request access. Find content that relates to you Find content that relates to you I am a Two new chapters cover read and write operations of commonly used SRAM, DRAM and non-volatile memory arrays, in addition to silicon-on-insulator SOI devices 18 useful appendices discuss topics such as spatial variation of quasi-Fermi potentials and power gain of a two-port network New homework exercises at the end of every chapter engage students with real-life problems and test their understanding.
Bipolar performance factors 9. NingIBM T. The new edition expands on this by introducing major new topics related to memories, silicon on modeern devices, and scale length and high field modeling as applied to MOSFETs. To gain access to locked resources you either need first to sign in or register for an account. The problems at the end of each chapter are carefully designed and serve to help the readers better understand the key concepts.
Those were editoin experiences and the book was well received by students.
Fundamentals of Modern VLSI Devices 2nd edition | | VitalSource
CMOS performance factors 6. Quantum-mechanical solution in weak inversion Are you sure you want to delete your account?
Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Add to wishlist Other available formats: Unlocking potential with the best learning and research solutions.
Bipolar device design 8. He spent twenty years at IBM's T. Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices.
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The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Image-force-induced barrier lowering 8. The range of materials we provide across our academic and higher education titles are an integral part of the book package whether you are a student, instructor, researcher or professional.
Fundamentals of Modern VLSI Devices
Energy-band diagram of a Si-SiGe n-p diode Deevices see the permission section of the www. View cart 0 Checkout. Your search for ' ' returned.
Fundamentals of Modern VLSI Devices
Every chapter is revised edvices reflect advances in VLSI devices in the last 10 years since the publication of the original book. Generation and recombination processes and space-charge-region current 6. I strongly recommend this book as a text vsli a reference in semiconductor device courses.
Understanding Modern Transistors and Diodes. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
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